Features:-
• Advanced process technology
• Low error voltage
• Fast switching speed
• Full-voltage operation
• High power and current handling capability
Detailed Specifications:-
Transistor Polarity | NPN |
Collector-Emitter Breakdown Voltage (BVCEO) | 25V |
Collector-Emitter Voltage (VCEO) | 25V |
Emitter-Base Voltage (VEBO) | 5V |
Continuous Collector Current (IC) | 100mA |
Output Capacitance (Cobo) | 6pF |
Transition Frequency (fT) | 250MHz |
DC Current Gain (hFE) | 120-800 |
Operating Temperature Range | -55 - 150°C |
Power Dissipation (PD) | 500mW |
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