Specification

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	84 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	12 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.54mm
Transistor Material	Si
Width	4.69mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	130 nC @ 10 V
Series	HEXFET
Minimum Operating Temperature	-55 °C
Height	8.77mm