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bd140 transistor

bd140 transistor

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bd140 transistor


 

 


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BD140 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. 

 

Features:- 

• Low saturation voltage 

• Simple drive requirements 

• High safe operating area 

• For low distortion complementary designs 

• Easy to carry and handle 

 

Detailed Specifications:- 

Transistor Polarity PNP
Collector−Emitter Voltage (VCEO) 80V 
Collector−Base Voltage (VCBO) 80V 
Continuous Collector Current (Ic) 1.5A 
Continuous Base Current (Ib) 0.5A 
DC Current Gain (hFE) 40-250 
Operating Temperature Range -65 - 150°C 
Power Dissipation (Pd) 12.5W 
Thermal Resistance (ΘJA) 100°C/W 
Thermal Resistance (ΘJC) 10°C/W 

 

Related Documents:- 

pdf.jpgBD140 Transistor Datasheet


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