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| Mounting Style: | Through Hole | |
| Package/Case: | TO-220-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Id - Continuous Drain Current: | 140 A | |
| Rds On - Drain-Source Resistance: | 5.6 mOhms | |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V | |
| Qg - Gate Charge: | 170 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 175 C | |
| Pd - Power Dissipation: | 330 W | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | Infineon Technologies | |
| Configuration: | Single | |
| Height: | 15.65 mm | |
| Length: | 10 mm | |
| Product Type: | MOSFET | |
| 1000 | ||
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Width: | 4.4 mm | |
| Part # Aliases: | IRFB4310PBF SP001566592 | |
| Unit Weight: | 2 g |
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