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bdx53c transistor

bdx53c transistor

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bdx53c transistor


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BDX53C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.  

 

Features:-  

• Low saturation voltage  

• Simple drive requirements  

• High safe operating area  

• For low distortion complementary designs  

• Easy to carry and handle  

 

Detailed Specifications:-  

Transistor Polarity  NPN
Collector−Emitter Voltage (VCEO)  100V  
Collector−Base Voltage (VCBO)  100V  
Continuous Collector Current (Ic)  8A  
Continuous Base Current (Ib)  0.2mA  
Operating Temperature Range  -65 - 150°C  
Power Dissipation (Pd)  60W  
DC Current Gain (hFE)  750
Emitter-Base Voltage (VEBO)   5V

 

Related Documents:-  

pdf.jpgBDX53C Transistor Datasheet
 


 


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