+965 51122049
| Mounting Style: | Through Hole | |
| Package/Case: | TO-247-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 500 V | |
| Id - Continuous Drain Current: | 20 A | |
| Rds On - Drain-Source Resistance: | 270 mOhms | |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | |
| Qg - Gate Charge: | 210 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 150 C | |
| Pd - Power Dissipation: | 280 W | |
| Channel Mode: | Enhancement | |
| Series: | IRFP | |
| Packaging: | Tube | |
| Brand: | Vishay Semiconductors | |
| Configuration: | Single | |
| Fall Time: | 58 ns | |
| Forward Transconductance - Min: | 13 S | |
| Product Type: | MOSFET | |
| Rise Time: | 59 ns | |
| 500 | ||
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 110 ns | |
| Typical Turn-On Delay Time: | 18 ns | |
| Unit Weight: | 6 g |
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