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Manufacturer | INFINEON TECHNOLOGIES | |
Type of transistor | N-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | 100V | |
Drain current | 33A | |
Power dissipation | 140W | |
Case | TO220AB | |
Gate-source voltage | ±20V | |
On-state resistance | 44mΩ | |
Mounting | THT | |
Gate charge | 47.3nC | |
Kind of package | tube | |
Kind of channel | enhanced |
data sheet
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