KWD2.000~~KWD2.000~~

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FGA25N120ANTD

Features:-

• NPT Trench Technology, Positive Temperature Coefficient

• Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C

• Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C

• Extremely Enhanced Avalanche Capability

Applications:-

• Induction Heating

• Microwave Oven

Specifications:-

Symbol	Description	Ratings	Units
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC = 25°C	50	A
IC	Collector Current @ TC = 100°C	25	A
ICM	Pulsed Collector Current	90	A
IF	Diode Continuous Forward Current @ TC = 25°C	50	A
IF	Diode Continuous Forward Current @ TC = 100°C	25	A
IFM	Diode Maximum Forward Current	150	A
PD	Maximum Power Dissipation @ TC = 25°C	312	W
	Maximum Power Dissipation @ TC = 100°C	125	W
TJ	Operating Junction Temperature	-55 to +150	°C
Tstg	Storage Temperature Range	55 to +150	°C
TL	Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds	300	°C