+965 51122049
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-247-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 800 V | |
| Id - Continuous Drain Current: | 17 A | |
| Rds On - Drain-Source Resistance: | 290 mOhms | |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V | |
| Qg - Gate Charge: | 88 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 150 C | |
| Pd - Power Dissipation: | 227 W | |
| Channel Mode: | Enhancement | |
| Tradename: | CoolMOS | |
| Series: | CoolMOS C3 |
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