IRF510 Pinout Description
Pin No | Pin Name | Pin Description |
| 1 | Gate | Control the biasing of MOSFET |
| 2 | Drain | Current flows-in through Drain |
| 3 | Source | Current flows-out through Source |
Features
- Dynamic dv/dt rating
- Single-pulse avalanche rated
- High input impedance
- Linear transfer characteristic
- High-speed switching speed (in terms of nano-second)
- Ease of paralleling
- Operating temperature up to 175˚C
- Low thermal resistance
Technical Specifications
- Transistor Polarity: N-channel
- Drain-to-source voltage VDS: 100V
- Drain-to-source current ID: 5.6A
- On-state resistance (drain-to-source resistance) RDS: 0.54Ω
- Operating temperature range: -55˚C to 175˚C
- Gate charge Qg: 8.3nC
- Gate-source voltage VGS: ±20V
- Maximum power dissipation: 43W
- Maximum voltage required to conduct: 2V to 4V
- Package type: TO-220AB
Note: More technical specifications can be found in the IRF510 datasheet attached at the end of this page.
Switching Characteristics
- Turn-on delay time td(on): 6.9ns
- Turn-off delay time td(off): 15ns
- Rise time tr: 16ns
- Fall time tf: 9.4ns
Applications
The applications of IRF510 are listed below.
- UPS (Uninterruptable Power Supply)
- Battery charger and management system
- Motor driver circuit
- Telecommunication and computer applications
- Solar UPS
- Fast switching applications
- Switching converter and regulators
Component Datasheet
