BDX53C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:-
• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle
Detailed Specifications:-
Transistor Polarity | NPN |
Collector−Emitter Voltage (VCEO) | 100V |
Collector−Base Voltage (VCBO) | 100V |
Continuous Collector Current (Ic) | 8A |
Continuous Base Current (Ib) | 0.2mA |
Operating Temperature Range | -65 - 150°C |
Power Dissipation (Pd) | 60W |
DC Current Gain (hFE) | 750 |
Emitter-Base Voltage (VEBO) | 5V |
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