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bdx53c transistor

bdx53c transistor

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bdx53c transistor


 

 


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BDX53C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. 

 

Features:- 

• Low saturation voltage 

• Simple drive requirements 

• High safe operating area 

• For low distortion complementary designs 

• Easy to carry and handle 

 

Detailed Specifications:- 

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 100V 
Collector−Base Voltage (VCBO) 100V 
Continuous Collector Current (Ic) 8A 
Continuous Base Current (Ib) 0.2mA 
Operating Temperature Range -65 - 150°C 
Power Dissipation (Pd) 60W 
DC Current Gain (hFE) 750
Emitter-Base Voltage (VEBO)  5V

 

Related Documents:- 

pdf.jpgBDX53C Transistor Datasheet
 


 


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