The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.
Feature:
- High current (max. 800 mA)
- Low voltage (max. 40 V).
Application:
- Linear amplification and switching.
Specification:
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 30V
- Power Dissipation Pd: 500mW
- DC Collector Current: 800mA
- DC Current Gain hFE: 100
- Transistor Case Style: TO-18
- No. of Pins: 3
- Collector Emitter Voltage Vces: 400mV
- Continuous Collector Current Ic Max: 800mA
- Current Ic @ Vce Sat: 150mA
- Current Ic Continuous a Max: 800mA
- Current Ic hFE: 150mA
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 250MHz
- Gain Bandwidth ft Typ: 250MHz
- Hfe Min: 100
- No. of Transistors: 1
- Pin Configuration: a
- Power Dissipation Pd: 500mW
- Power Dissipation Ptot Max: 500mW
- Termination Type: Through Hole
- Voltage Vcbo: 60V
Package Content:
1 x 2n2222 Switching Transistor
Component Datasheet
