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bd139 transistor

bd139 transistor

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bd139 transistor


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BD139 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.  

 

Features:-  

• Low saturation voltage  

• Simple drive requirements  

• High safe operating area  

• For low distortion complementary designs  

• Easy to carry and handle  

 

Detailed Specifications:-  

Transistor Polarity  NPN
Collector−Emitter Voltage (VCEO)  80V  
Collector−Base Voltage (VCBO)  80V  
Continuous Collector Current (Ic)  1.5A  
Continuous Base Current (Ib)  0.5A  
DC Current Gain (hFE)  40-250  
Operating Temperature Range  -65 - 150°C  
Power Dissipation (Pd)  12.5W  
Thermal Resistance (ΘJA)  100°C/W  
Thermal Resistance (ΘJC)  10°C/W  

 

Related Documents:-  

pdf.jpgBD139 Transistor Datasheet


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