Mounting Style: | Through Hole | |
Package/Case: | TO-247-3 | |
Transistor Polarity: | N-Channel | |
Number of Channels: | 1 Channel | |
Vds - Drain-Source Breakdown Voltage: | 200 V | |
Id - Continuous Drain Current: | 30 A | |
Rds On - Drain-Source Resistance: | 75 mOhms | |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
Vgs th - Gate-Source Threshold Voltage: | 1.8 V | |
Qg - Gate Charge: | 82 nC | |
Minimum Operating Temperature: | - 55 C | |
Maximum Operating Temperature: | + 175 C | |
Pd - Power Dissipation: | 214 W | |
Channel Mode: | Enhancement | |
Packaging: | Tube | |
Brand: | Infineon Technologies | |
Configuration: | Single | |
Fall Time: | 33 ns | |
Forward Transconductance - Min: | 17 S | |
Height: | 20.7 mm | |
Length: | 15.87 mm | |
Product Type: | MOSFET | |
Rise Time: | 43 ns | |
400 | ||
Subcategory: | MOSFETs | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 41 ns | |
Typical Turn-On Delay Time: | 14 ns | |
Width: | 5.31 mm | |
Part # Aliases: | IRFP250NPBF SP001554946 | |
Unit Weight: | 6 g |
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