28C64 - PLCC32 EEPROM

Features
• Fast Read Access Time – 150 ns      
• Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes      
• Fast Write Cycle Times      
– Page Write Cycle Time: 10 ms Maximum (Standard)      
– 1 to 64-byte Page Write Operation      
• Low Power Dissipation      
– 40 mA Active Current      
– 100 µA CMOS Standby Current      
• Hardware and Software Data Protection      
• DATA Polling and Toggle Bit for End of Write Detection      
• High Reliability CMOS Technology      
– Endurance: 100,000 Cycles      
– Data Retention: 10 Years      
• Single 5V ±10% Supply      
• CMOS and TTL Compatible Inputs and Outputs      
• JEDEC Approved Byte-wide Pinout      
• Industrial Temperature Ranges    

Data sheet

https://www.futurlec.com/Memory/28C64PLCC.shtml