28C64 - PLCC32 EEPROM

Features
• Fast Read Access Time – 150 ns 
• Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes 
• Fast Write Cycle Times 
– Page Write Cycle Time: 10 ms Maximum (Standard) 
– 1 to 64-byte Page Write Operation 
• Low Power Dissipation 
– 40 mA Active Current 
– 100 µA CMOS Standby Current 
• Hardware and Software Data Protection 
• DATA Polling and Toggle Bit for End of Write Detection 
• High Reliability CMOS Technology 
– Endurance: 100,000 Cycles 
– Data Retention: 10 Years 
• Single 5V ±10% Supply 
• CMOS and TTL Compatible Inputs and Outputs 
• JEDEC Approved Byte-wide Pinout 
• Industrial Temperature Ranges