28C64 - PLCC32 EEPROM

Features
• Fast Read Access Time – 150 ns   
• Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes   
• Fast Write Cycle Times   
– Page Write Cycle Time: 10 ms Maximum (Standard)   
– 1 to 64-byte Page Write Operation   
• Low Power Dissipation   
– 40 mA Active Current   
– 100 µA CMOS Standby Current   
• Hardware and Software Data Protection   
• DATA Polling and Toggle Bit for End of Write Detection   
• High Reliability CMOS Technology   
– Endurance: 100,000 Cycles   
– Data Retention: 10 Years   
• Single 5V ±10% Supply   
• CMOS and TTL Compatible Inputs and Outputs   
• JEDEC Approved Byte-wide Pinout   
• Industrial Temperature Ranges