28C64 - PLCC32 EEPROM

Features
• Fast Read Access Time – 150 ns    
• Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes    
• Fast Write Cycle Times    
– Page Write Cycle Time: 10 ms Maximum (Standard)    
– 1 to 64-byte Page Write Operation    
• Low Power Dissipation    
– 40 mA Active Current    
– 100 µA CMOS Standby Current    
• Hardware and Software Data Protection    
• DATA Polling and Toggle Bit for End of Write Detection    
• High Reliability CMOS Technology    
– Endurance: 100,000 Cycles    
– Data Retention: 10 Years    
• Single 5V ±10% Supply    
• CMOS and TTL Compatible Inputs and Outputs    
• JEDEC Approved Byte-wide Pinout    
• Industrial Temperature Ranges  

Data sheet

https://www.futurlec.com/Memory/28C64PLCC.shtml